Development of a new modular switch using a next-generation semiconductor

高柳 智弘; 植野 智晶*; 堀野 光喜*

Journal of Physics; Conference Series, 1067, p.082019_1 - 082019_6, 2018/10

https://doi.org/10.1088/1742-6596/1067/8/082019

Semiconductor switches using SiC-MOSFETs are expected to substitute the thyratron, and they are designed by connecting many semiconductor switches in parallel-series for high power operation. In order to suppress the common-mode noise caused by switching, it is common to form a symmetrical circuit. However, as the number of parallel connections in the horizontal direction increases, the length of the parallel circuit becomes longer, and the output waveform is distorted due to time lag between the circuits. Therefore, we propose a radially-symmetrical type module switch which can equalize the circuit length regardless of the number of parallel circuit. Even in circuit fabrication, it was easy for the radially-symmetrical type to make the distances of the parallel circuits equal, shorten the circuit length, and make the circuit impedance lower than the line-symmetrical type. It was confirmed that the radially-symmetrical type circuit is very useful for constructing multiple circuits. The design and preliminary test results of two types of switch circuits, radially-symmetrical type and general line-symmetrical type are presented here.